izakhiwo zomkhiqizo
UHLOBO
CHAZA
isigaba
Imikhiqizo ye-Discrete Semiconductor
Transistor – FET, MOSFET – Single
umkhiqizi
I-Infineon Technologies
uchungechunge
I-CoolGaN™
Iphakheji
I-Tape ne-Reel (TR)
I-Shear Band (CT)
I-Digi-Reel® Custom Reel
Isimo somkhiqizo
iyekisiwe
Uhlobo lwe-FET
Isiteshi esingu-N
ubuchwepheshe
I-GaNFET (Gallium Nitride)
I-Drain-Source Voltage (Vdss)
600V
Okwamanje ku-25°C – Ukugeleza Okuqhubekayo (Id)
I-31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Ukumelana (ubukhulu) ku-Id ehlukile, Vgs
-
I-Vgs(th) (isilinganiso esiphezulu) kuma-Id ahlukene
1,6V @ 2,6mA
I-Vgs (ubuningi)
-10V
Umthamo wokufaka (Ciss) kuma-Vd ahlukene (ubukhulu)
380pF @ 400V
Umsebenzi we-FET
-
Ukuchithwa kwamandla (ubukhulu)
125W (Tc)
izinga lokushisa lokusebenza
-55°C ~ 150°C (TJ)
uhlobo lokufaka
Uhlobo Lwentaba Engaphezulu
Ukupakishwa Kwedivayisi Yomhlinzeki
PG-DSO-20-87
Iphakheji/Indawo Evalekile
20-PowerSOIC (0.433″, 11.00mm ububanzi)
Inombolo yomkhiqizo eyisisekelo
IGOT60
Imidiya nokulandiwe
UHLOBO LOKUSEBENZA
LINK
Imininingwane
I-IGOT60R070D1
Umhlahlandlela Wokukhetha we-GaN
I-CoolGaN™ 600 V e-mode ye-GaN HEMTs Kafushane
Eminye imibhalo ehlobene
I-GaN kuma-Adapter/Amashaja
I-GaN ku-Server ne-Telecom
Ukuba ngokoqobo kanye Nokufaneleka kwe-CoolGaN
Kungani CoolGaN
I-GaN ekushajeni okungenantambo
ifayela levidiyo
Inkundla yokuhlola i-CoolGaN™ 600V e-mode ye-HEMT yebhuloho elincane elihlanganisa ne-GaN EiceDRIVER™
I-CoolGaN™ – i-paradigm yamandla entsha
2500 W ibhodi lokuhlola i-totem pole ye-PFC yebhuloho eligcwele lisebenzisa i-CoolGaN™ 600 V
Imininingwane ye-HTML
I-CoolGaN™ 600 V e-mode ye-GaN HEMTs Kafushane
I-IGOT60R070D1
Ukuhlelwa Kwemvelo kanye Nokuthekelisa
IZIMPAWU
CHAZA
Isimo se-RoHS
Ihambisana nokucaciswa kwe-ROHS3
Izinga Lokuzwela Komswakama (MSL)
3 (amahora angu-168)
REACH isimo
Imikhiqizo engafinyeleli
ECCN
I-EAR99
HTSUS
8541.29.0095
